From AI data centers to quantum computing and telecommunications, global semiconductor innovation demands materials that can handle extreme voltage, heat, and/or freuqencies. Silicon is maxing out on all three. Next generation materials like silicon carbide, gallium nitride, lithium niobate, and indium phosphide are the solution, but efficiently integrating them into device architectures remains industry’s greatest bottleneck. Current techniques waste most of these expensive materials and were not built for heterogeneous systems of the future. K1 Semiconductor has found a way to bridge that gap.
K1 Semiconductor provides the ideal, scalable solution through our innovative spalling technology. By depositing a highly stressed layer to carefully propagate a subsurface crack, we deterministically release a flawless active layer from the parent wafer. By bonding this pristine layer to an engineered handle wafer, we deliver uncompromised bulk-quality performance at a fraction of the traditional material cost.
K1’s wafer-splitting (“spalling”) platform technology produces thin layers that can enable engineered composite wafers delivering generational performance gains.
K1 is led by a multidisciplinary team of scientists, engineers, and business operators — backed by world-class advisors experienced in semiconductor manufacturing and deep-tech commercialization.
